/ 
Physics-Etch-0.01
/ Physics::Etch::Chamber

NAME

Physics::Etch::Chamber - plasma-etch reactor geometry and derived conditions

SYNOPSIS

use Physics::Etch::Chamber;

my $ch = Physics::Etch::Chamber->new(
    reactor_type   => 'CCP-RIE',
    wafer_diameter_mm => 200,
    gap_cm         => 2.5,
    pressure_mtorr => 30,
    power_w        => 300,
    flow_sccm      => 80,
    gas            => 'SF6', gas_mass_amu => 146, gas_diameter_m => 4.8e-10,
);

print $ch->report;
printf "bias=%.0f V, tau=%.1f ms, lambda=%.2f mm\n",
    $ch->self_bias_v, 1000*$ch->residence_time_s, $ch->mean_free_path_mm;

# feed the derived conditions straight into a dry etch
my %cond = $ch->process_conditions;   # ( pressure => .., bias => .. )

DESCRIPTION

Turns reactor geometry and operating point into the quantities that control an etch: electrode area_ratio, power_density, residence_time_s (gas depletion / loading), mean_free_path_m and knudsen (ion directionality), and a heuristic DC self_bias_v / ion_energy_ev. process_conditions returns pressure and bias ready to pass to Physics::Etch::DryEtch.

The self-bias model is a calibrated heuristic (rises with power and electrode asymmetry, falls with pressure), not a first-principles sheath solution.