/ 
Physics-Etch-0.01
/ Physics::Etch::Layout

NAME

Physics::Etch::Layout - mask-pattern geometry for etch modelling

SYNOPSIS

use Physics::Etch::Layout;

my $lay = Physics::Etch::Layout->from_gdsii_file( 'mask.gds',
    layer => 1, tone => 'clear' );

printf "open fraction: %.1f%%\n", 100 * $lay->open_fraction;
my $cd  = $lay->cd_stats_nm;         # { min, mean, max, n }
my $den = $lay->density_map( cell_um => 20 );

DESCRIPTION

Analyses a photoresist / mask layer (from Physics::Etch::GDSII or an explicit polygon list) into the quantities that drive etch loading and anisotropy:

  • open_area_um2 / open_area_cm2 / open_fraction - macro-loading input

  • features / cd_stats_nm - per-feature critical dimension (for ARDE)

  • density_map - local open-fraction grid (micro-loading input)

tone selects whether drawn polygons are the openings (clear) or the protected mask (dark). Feature CD is estimated from each polygon's bounding box (exact for axis-aligned rectangles and lines).