NAME

Physics::Etch::Process - base class for wet and dry etch process models

DESCRIPTION

Common machinery shared by Physics::Etch::WetEtch and Physics::Etch::DryEtch: film/mask/substrate bookkeeping, profile geometry (depth, undercut, etch bias, sidewall angle, aspect ratio), selectivity and mask-survival calculations, across-wafer uniformity, and a formatted report().

Subclasses must implement process_type, vertical_rate and lateral_rate, and may add recipe knobs to the report via _conditions_lines.

KEY METHODS

time_to_clear / etch_time / etch_depth($t) / undercut($t)

anisotropy ( 1 - lateral/vertical )

profile($t) hashref with top/bottom width, sidewall angle, aspect ratio

mask_loss($t) / mask_survives($t) / substrate_overetch($t)

uniformity_report / report